Semiconductor device structure with metal gate stacks

ABSTRACT

A semiconductor device structure is provided. The semiconductor device structure includes a first metal gate stack and a second metal gate stack over a semiconductor substrate. The semiconductor device structure also includes a dielectric layer surrounding the first metal gate stack and the second metal gate stack. The semiconductor device structure further includes an insulating structure between the first metal gate stack and the second metal gate stack. The insulating structure has a first convex surface facing towards the first metal gate stack.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a Continuation application of U.S. patentapplication Ser. No. 15/965,183, filed on Apr. 27, 2018, which claimsthe benefit of U.S. Provisional Application No. 62/616,685, filed onJan. 12, 2018, the entirety of which are incorporated by referenceherein.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experienced rapidgrowth. Technological advances in IC materials and design have producedgenerations of ICs. Each generation has smaller and more complexcircuits than the previous generation.

In the course of IC evolution, functional density (i.e., the number ofinterconnected devices per chip area) has generally increased whilegeometric size (i.e., the smallest component (or line) that can becreated using a fabrication process) has decreased. This scaling-downprocess generally provides benefits by increasing production efficiencyand lowering associated costs.

However, these advances have increased the complexity of processing andmanufacturing ICs. Since feature sizes continue to decrease, fabricationprocesses continue to become more difficult to perform. Therefore, it isa challenge to form reliable semiconductor devices at smaller andsmaller sizes.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It shouldbe noted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1A-1I are cross-sectional views of various stages of a process forforming a semiconductor device structure, in accordance with someembodiments.

FIGS. 2A-2F are top views of various stages of a process for forming asemiconductor device structure, in accordance with some embodiments.

FIG. 3 is a perspective view of an intermediate stage of a process forforming a semiconductor device structure, in accordance with someembodiments.

FIGS. 4A-4C are cross-sectional views of various stages of a process forforming a semiconductor device structure, in accordance with someembodiments.

FIG. 5 is a cross-sectional view of an intermediate stage of a processfor forming a semiconductor device structure, in accordance with someembodiments.

FIGS. 6A and 6B each shows a top view of an intermediate stage of aprocess for forming a semiconductor device structure, in accordance withsome embodiments.

FIGS. 7A-7B are top views of various stages of a process for forming asemiconductor device structure, in accordance with some embodiments.

FIGS. 8A-8C are cross-sectional views of various stages of a process forforming a semiconductor device structure, in accordance with someembodiments.

FIG. 9 is a cross-sectional view of a semiconductor device structure, inaccordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Some embodiments of the disclosure are described. Additional operationscan be provided before, during, and/or after the stages described inthese embodiments. Some of the stages that are described can be replacedor eliminated for different embodiments. Additional features can beadded to the semiconductor device structure. Some of the featuresdescribed below can be replaced or eliminated for different embodiments.Although some embodiments are discussed with operations performed in aparticular order, these operations may be performed in another logicalorder.

Embodiments of the disclosure may relate to FinFET structure havingfins. The fins may be patterned by any suitable method. For example, thefins may be patterned using one or more photolithography processes,including double-patterning or multi-patterning processes. Generally,double-patterning or multi-patterning processes combine photolithographyand self-aligned processes, allowing patterns to be created that have,for example, pitches smaller than what is otherwise obtainable using asingle, direct photolithography process. For example, in someembodiments, a sacrificial layer is formed over a substrate andpatterned using a photolithography process. Spacers are formed alongsidethe patterned sacrificial layer using a self-aligned process. Thesacrificial layer is then removed, and the remaining spacers may then beused to pattern the fins. However, the fins may be formed using one ormore other applicable processes.

In some embodiments, multiple dummy gate stacks (including a first dummygate stack and a second dummy gate stack) are formed over asemiconductor substrate. The dummy gate stacks may extend over multiplefin structures. In some embodiments, a dielectric layer is formed tosurround the first dummy gate stack and the second dummy gate stack.

Afterwards, a gate replacement process is used to form metal gate stacksto replace the dummy gate stacks. In some embodiments, the first dummygate stack and the second dummy gate stack are removed to form a firsttrench and a second trench. In some embodiments, gate dielectric layers,work function layers, and metal fillings are formed in the first trenchand the second trenches to form a first metal gate stack and a secondmetal gate stack. Multiple deposition processes and one or moreplanarization processes may be used to form the metal gate stacks.

In some embodiments, a mask element is formed. The mask element has anopening that exposes a portion of the first metal gate stack, a portionof the dielectric layer, and a portion of the second metal gate stack.The top view of the opening may be rectangular, oval, or square.

In some embodiments, the first metal gate stack, the second metal gatestack, and the dielectric layer are partially removed to form a recess.The recess may also be called a cut-metal-gate (CMG) opening. The CMGopening penetrates through the first metal gate stack and the secondmetal gate stack. The CMG opening separates the first metal gate stackinto two sections. Two metal gate stacks are thus formed by cutting thefirst metal gate stack. The CMG opening also separates the second metalgate stack into two sections. Two metal gate stacks are thus formed bycutting the second metal gate stack. In some embodiments, the CMGopening is formed using an etching process with the mask element as anetching mask.

In some embodiments, the etching process for forming the CMG openinginvolves using one or more etchant gas such as BCl₃, Cl₂, and SiCl₄. Insome embodiments, an over-etching process is used to ensure the twometal gate stacks obtained from cutting the first metal gate stacks arenot in electrical contact with each other. Short circuiting therebetweenis therefore prevented.

In some embodiments, the CMG opening has an oval-like top view shape. Insome embodiments, the CMG opening has a first width near a center lineof the first metal gate. The CMG opening may also have a second widthnear an edge of the first metal gate. In some embodiments, the firstwidth is greater than the second width.

Aspects of the embodiments of the disclosure are illustrated in moredetail when read with the accompanying figures.

FIGS. 1A-1I are cross-sectional views of various stages of a process forforming a semiconductor device structure, in accordance with someembodiments. As shown in FIG. 1A, a semiconductor substrate 100 isreceived or provided. In some embodiments, the semiconductor substrate100 is a bulk semiconductor substrate, such as a semiconductor wafer.For example, the semiconductor substrate 100 includes silicon or otherelementary semiconductor materials such as germanium. The semiconductorsubstrate 100 may be un-doped or doped (e.g., p-type, n-type, or acombination thereof). In some other embodiments, the semiconductorsubstrate 100 includes a compound semiconductor. The compoundsemiconductor may include silicon carbide, gallium arsenide, indiumarsenide, indium phosphide, one or more other suitable compoundsemiconductors, or a combination thereof. In some embodiments, thesemiconductor substrate 100 is an active layer of asemiconductor-on-insulator (SOI) substrate. The SOI substrate may befabricated using a separation by implantation of oxygen (SIMOX) process,a wafer bonding process, another applicable method, or a combinationthereof. In some other embodiments, the semiconductor substrate 100includes a multi-layered structure. For example, the semiconductorsubstrate 100 includes a silicon-germanium layer formed on a bulksilicon layer.

As shown in FIG. 1A, the semiconductor substrate 100 includes multipleportions (including portions 110A and 110B) defined by an imaginary lineL. In some embodiments, multiple transistors are formed or to be formedin and/or over the portions 110A and 110B of the semiconductor substrate100. In some embodiments, a p-type metal-oxide-semiconductor fieldeffect transistor (PMOSFET) and an n-type metal-oxide-semiconductorfield effect transistor (NMOSFET) will be formed in and/or over theportions 110A and 110B, respectively. In some other embodiments, anNMOSFET and a PMOSFET will be formed in and/or over the portions 110Aand 110B, respectively. In some other embodiments, NMOSFETs will beformed in and/or over the portions 110A and 110B. In some otherembodiments, PMOSFETs will be formed in and/or over the portions 110Aand 110B.

As shown in FIG. 1A, multiple recesses (or trenches) are formed in thesemiconductor substrate 100, in accordance with some embodiments. As aresult, multiple fin structures including fin structures 101A and 101Bare formed or defined between the recesses. In some embodiments, one ormore photolithography and etching processes are used to form therecesses. In some embodiments, the fin structures 101A and 101B are indirect contact with the semiconductor substrate 100.

However, embodiments of the disclosure have many variations and/ormodifications. In some other embodiments, the fin structures 101A and101B are not in direct contact with the semiconductor substrate 100. Oneor more other material layers may be formed between the semiconductorsubstrate 100 and the fin structures 101A and 101B. For example, adielectric layer may be formed therebetween.

As shown in FIG. 1A, isolation features 102 are formed in the recessesto surround lower portions of the fin structures 101A and 101B, inaccordance with some embodiments. The isolation features 102 are used todefine and electrically isolate various device elements formed in and/orover the semiconductor substrate 100. In some embodiments, the isolationfeatures 102 include shallow trench isolation (STI) features, localoxidation of silicon (LOCOS) features, another suitable isolationfeature, or a combination thereof.

In some embodiments, each of the isolation features 102 has amulti-layer structure. In some embodiments, the isolation features 102are made of a dielectric material. The dielectric material may includesilicon oxide, silicon nitride, silicon oxynitride, fluoride-dopedsilicate glass (FSG), low-K dielectric material, one or more othersuitable materials, or a combination thereof. In some embodiments, anSTI liner (not shown) is formed to reduce crystalline defects at theinterface between the semiconductor substrate 100 and the isolationfeatures 102. Similarly, the STI liner may also be used to reducecrystalline defects at the interface between the fin structures and theisolation features 102.

In some embodiments, a dielectric material layer is deposited over thesemiconductor substrate 100. The dielectric material layer covers thefin structures including the fin structures 101A and 101B and fills therecesses between the fin structures. In some embodiments, the dielectricmaterial layer is deposited using a chemical vapor deposition (CVD)process, an atomic layer deposition (ALD) process, a physical vapordeposition (PVD) process, a spin-on process, one or more otherapplicable processes, or a combination thereof. In some embodiments, aplanarization process is used to thin down the dielectric material layeruntil the fin structures 101A and 101B or hard mask elements definingthe fin structures are exposed. The planarization process may include achemical mechanical polishing (CMP) process, a grinding process, a drypolishing process, an etching process, one or more other applicableprocesses, or a combination thereof. Afterwards, the dielectric materiallayer is etched back such that the fin structures including the finstructures 101A and 101B protrude from the top surface of the etcheddielectric material layer. As a result, the isolation features 102 areformed.

As shown in FIG. 1B, a gate dielectric layer 104 and a dummy gateelectrode layer 106 are deposited over the isolation features 102 andthe fin structures 101A and 101B, in accordance with some embodiments.In some embodiments, the gate dielectric layer 104 is made of orincludes silicon oxide, silicon nitride, silicon oxynitride, dielectricmaterial with a high dielectric constant (high-K), one or more othersuitable dielectric materials, or a combination thereof. Examples ofhigh-K dielectric materials include hafnium oxide, zirconium oxide,aluminum oxide, hafnium dioxide-alumina alloy, hafnium silicon oxide,hafnium silicon oxynitride, hafnium tantalum oxide, hafnium titaniumoxide, hafnium zirconium oxide, one or more other suitable high-Kmaterials, or a combination thereof. In some embodiments, the gatedielectric layer 104 is a dummy gate dielectric layer which will beremoved subsequently. The dummy gate dielectric layer is, for example, asilicon oxide layer.

In some embodiments, the gate dielectric layer 104 is deposited using achemical vapor deposition (CVD) process, an atomic layer deposition(ALD) process, a thermal oxidation process, a physical vapor deposition(PVD) process, one or more other applicable processes, or a combinationthereof.

In some embodiments, the dummy gate electrode layer 106 is made of orincludes a semiconductor material such as polysilicon. For example, thedummy gate electrode layer 106 is deposited using a CVD process or otherapplicable processes.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some embodiments, the gate dielectric layer 104 is notformed.

Afterwards, a patterned hard mask layer is formed over the dummy gateelectrode layer 106, as shown in FIG. 1B in accordance with someembodiments. The patterned hard mask layer is used to pattern the dummygate electrode layer 106 and the gate dielectric layer 104 into one ormore dummy gate stacks (or dummy gate stack lines). In some embodiments,the patterned hard mask layer includes a first hard mask layer 108 a anda second hard mask layer 108 b. In some embodiments, the first hard masklayer 108 a is made of or includes silicon nitride. In some embodiments,the second hard mask layer 108 b is made of or includes silicon oxide.In some embodiments, the second hard mask layer 108 b is thicker thanthe first hard mask layer 108 a.

In some embodiments, the dummy gate stacks are multiple dummy gate stacklines formed over the isolation features 102 and the fin structures 101Aand 101B. In some embodiments, the dummy gate stack lines aresubstantially parallel to each other. In some embodiments, each of thedummy gate stacks (or dummy gate stack lines) is formed into two or moregate stacks in subsequent processes.

In some embodiments, a patterned photoresist layer (not shown) is usedto assist in the formation of the patterned hard mask layer. Thepatterned photoresist layer is formed using one or more photolithographyprocesses. The photolithography processes may include photoresistcoating (e.g., spin-on coating), soft baking, mask aligning, exposure,post-exposure baking, developing the photoresist, rinsing, drying (e.g.,hard baking), one or more other suitable processes, or a combinationthereof.

Afterwards, the dummy gate electrode layer 106 and the gate dielectriclayer 104 are patterned to form one or more dummy gate stacks includinga dummy gate stack 107A, as shown in FIG. 1C in accordance with someembodiments. In some embodiments, the hard mask layers 108 a and 108 bare removed afterwards.

FIGS. 2A-2F are top views of various stages of a process for forming asemiconductor device structure, in accordance with some embodiments. Insome embodiments, FIG. 2A is a top view of the structure shown in FIG.1C and other portions that are not shown in FIG. 1C. As shown in FIG.2A, multiple dummy gate stacks including 107A-107D are formed, inaccordance with some embodiments. Each of the dummy gate stacks107A-107D includes the dummy gate electrode layer 106 and the gatedielectric layer 104.

FIG. 3 is a perspective view of an intermediate stage of a process forforming a semiconductor device structure, in accordance with someembodiments. In some embodiments, FIG. 3 is a perspective view showing aportion of the structure shown in FIG. 1C or 2A.

Afterwards, source/drain structures are formed over the fin structures101A and 101B and adjacent to the dummy gate stack 107A, in accordancewith some embodiments. FIGS. 4A-4C are cross-sectional views of variousstages of a process for forming a semiconductor device structure, inaccordance with some embodiments. FIG. 5 is a cross-sectional view of anintermediate stage of a process for forming a semiconductor devicestructure, in accordance with some embodiments. In some embodiments,FIGS. 1C-1I are some cross-sectional views taken along the line I-I ofFIGS. 2B-2F. In some embodiments, FIGS. 4A-4C are some cross-sectionalviews taken along the line J-J of FIGS. 2B-2F, and FIG. 5 is across-sectional view taken along the line K-K of FIG. 2F.

As shown in FIG. 2B or 4A, source/drain structures 114A and 114B areformed over the semiconductor substrate 100 and adjacent to the dummygate stack 107A, in accordance with some embodiments. As shown in FIG.2B, in some embodiments, multiple transistors are formed in and/or overthe portions 110A, 110B, 110C, and 110D of the semiconductor substrate100. The source/drain structures 114A are a portion of the transistorformed in and/or over the portion 110A, and the source/drain structure114B are a portion of another transistor formed in and/or over theportion 110B.

In some embodiments, the fin structures 101A and 101B are recessed to belower than top surfaces of the isolation features 102, in accordancewith some embodiments. In some embodiments, an etching process isperformed to remove upper portions of the fin structures 101A and 101B.As a result, recesses are formed above the fin structures 101A (and101B), as shown in FIG. 4A. In some other embodiments, multiple etchingoperations are used so that the recesses further extend laterallytowards channel regions below the dummy gate stack 107A.

In some embodiments, a semiconductor material (or two or moresemiconductor materials) is epitaxially grown over the fin structuresthat are recessed, growing continually to above the recesses, to formthe source/drain structures 114A and 114B. In some embodiments, thegrowth of the source/drain structures 114A and 114B are performedsimultaneously. In some embodiments, the growth of the source/drainstructures 114A and 114B are performed separately in differentprocesses.

In some embodiments, the source/drain structures 114A are a p-typesemiconductor material. For example, the source/drain structures 114Amay include epitaxially grown silicon germanium. The source/drainstructures 114A are not limited to being a p-type semiconductormaterial. In some embodiments, the source/drain structures 114A are ann-type semiconductor material. The source/drain structures 114A mayinclude epitaxially grown silicon, epitaxially grown silicon carbide(SiC), epitaxially grown silicon phosphide (SiP), or another suitableepitaxially grown semiconductor material.

In some embodiments, both of the source/drain structures 114A and 114Bare p-type. In some embodiments, both of the source/drain structures114A and 114B are n-type. In some embodiments, one of the source/drainstructures 114A and 114B is p-type, and the other of the source/drainstructures 114A and 114B is n-type.

In some embodiments, the source/drain structures 114A and 114B areformed using a selective epitaxy growth (SEG) process, a CVD process(e.g., a vapor-phase epitaxy (VPE) process, a low pressure chemicalvapor deposition (LPCVD) process, and/or an ultra-high vacuum CVD(UHV-CVD) process), a molecular beam epitaxy process, one or more otherapplicable processes, or a combination thereof. The formation process ofthe source/drain structures 114A and 114B may use gaseous and/or liquidprecursors. In some embodiments, both the source/drain structures 114Aand 114B are grown in-situ in the same process chamber. The source/drainstructures 114A and 114B may be formed using an in-situ epitaxial growthprocess. In some other embodiments, the source/drain structures 114A and114B are grown separately in different process chambers.

In some embodiments, the source/drain structures 114A and 114B includedopants. In some embodiments, multiple implantation processes areperformed to dope the source/drain structures 114A and 114B. In someembodiments, spacer elements 112 are formed over sidewalls of the dummygate stack 107A to assist in the formation of the source/drainstructures 114A and 114B, as shown in FIGS. 2B and 4A. In someembodiments, lightly doped source/drain regions (not shown) are formedusing ion implantation processes before the spacer elements 112 areformed.

In some embodiments, the source/drain structures 114A and 114B are dopedin-situ during the growth of the source/drain structures 114A and 114B.In some other embodiments, the source/drain structures 114A and 114B arenot doped during the growth of the source/drain structures 114A and114B. After the epitaxial growth, the source/drain structures 114A and114B are doped in a subsequent process. In some embodiments, the dopingis achieved using an ion implantation process, a plasma immersion ionimplantation process, a gas and/or solid source diffusion process, oneor more other applicable processes, or a combination thereof. In someembodiments, the source/drain structures 114A and 114B are furtherexposed to one or more annealing processes to activate the dopants. Forexample, a rapid thermal annealing process is used.

Afterwards, the dummy gate stacks including 107A and 107B are removed,in accordance with some embodiments. In some embodiments, before theremoval of the dummy gate stacks 107A and 107B, a dielectric layer 113is deposited over the semiconductor substrate 100 to surround thesource/drain structures 114A and 114B and the dummy gate stacks107A-107D, as shown in FIG. 4B. In FIG. 2C, for the sake of clarity,elements (such as the source/drain structures 114A and 114B) covered bythe dielectric layer 113 are illustrated as dashed lines.

In some embodiments, the dielectric layer 113 is made of or includessilicon oxide, silicon oxynitride, borosilicate glass (BSG), phosphoricsilicate glass (PSG), borophosphosilicate glass (BPSG), fluorinatedsilicate glass (FSG), low-k material, porous dielectric material, one ormore other suitable dielectric materials, or a combination thereof. Insome embodiments, the dielectric layer 113 is deposited using a CVDprocess, an ALD process, a PVD process, a spin-on process, one or moreother applicable processes, or a combination thereof.

Afterwards, the dielectric layer 113 is thinned down until the dummygate stacks including 107A-107D are exposed. The thinned dielectriclayer 113 surrounds the dummy gate stacks 107A-107D. In someembodiments, the dielectric layer 113 is thinned down using aplanarization process. The planarization process may include a chemicalmechanical polishing (CMP) process, a grinding process, an etchingprocess, a dry polishing process, one or more other applicableprocesses, or a combination thereof. Many variations and/ormodifications can be made to embodiments of the disclosure. In someother embodiments, the dielectric layer 113 is not formed.

Afterwards, the dummy gate stacks 107A-107D are removed to form trenches116 that expose the fin structures including the fin structures 101A and101B and the isolation features 102, as shown in FIG. 1D in accordancewith some embodiments. FIG. 2C shows the top view of the trenches 116.The trenches 116 expose the fin structures 101A and 101B and theisolation features 102. In some embodiments, the dielectric layer 113 isformed, and the trenches 116 are formed in the dielectric layer 113. Inthese cases, the dielectric layer 113 surrounds the trenches 116, asshown in FIG. 4B. In some embodiments, each of the trenches 116 issurrounded by the spacer elements 112. In some embodiments, one of thetrenches 116 exposes the portions of the fin structures 101A and 101Bthat are originally covered by the dummy gate stacks 107A. The exposedportions of fin structures 101A and 101B may serve as channel regions.

In some embodiments, the dummy gate stacks 107A-107D are removed using adry etching process, a wet etching process, one or more other applicableprocesses, or a combination thereof. In some embodiments, the gatedielectric layer 104 is made of a high-K material and is not removed. Inthese cases, the trenches 116 expose the gate dielectric layer 104.

After the removal of the dummy gate stacks 107A-107D, metal gate stacklayers are formed in the trenches 116, in accordance with someembodiments. The metal gate stack layers extend along sidewalls and topsof the fin structures 101A and 101B, as shown in FIG. 1E. Each of themetal gate stack layers in the trench 116 may also be called a metalgate stack line. FIG. 2D shows the top view of the metal gate stackline.

As mentioned above, in some embodiments, each of the dummy gate stacks107A-107D (or dummy gate stack lines) will be formed into two or moregate stacks. Therefore, each of the trenches 116 formed after theremoval of the dummy gate stacks 107A-107D is large enough to containtwo or more metal gate stacks. The depositions or fillings of the metalgate stack layers are easier than other cases where the depositions orfillings of the metal gate stack layers are performed in a recessdesigned to contain only one metal gate stack. Therefore, the processwindow is enlarged significantly.

In some embodiments, the metal gate stack layers include a gatedielectric layer, a work function layer, and a metal filling layer. Insome embodiments, two transistors are formed in and/or over the portions110A and 110B of the semiconductor substrate 100. In some embodiments,one of the transistors is a p-type transistor, and the other one is ann-type transistor. In some embodiments, both of the transistors arep-type transistors. In some embodiments, both of the transistors aren-type transistors. In some embodiments, one or more p-type workfunction layers are formed over the portion 110A, and one or more n-typework function layers are formed over the portion 110B. In someembodiments, one or more n-type work function layers are formed over theportion 110A, and one or more p-type work function layers are formedover the portion 110B.

As shown in FIGS. 1E, 4C, and 5, a gate dielectric layer 118 isdeposited over the sidewalls and bottom of the trench 116, in accordancewith some embodiments. In some embodiments, the gate dielectric layer118 extends over both of the portions 110A and 110B. In someembodiments, the gate dielectric layer 118 is made of or includes ahigh-k dielectric layer. The high-k dielectric layer may be made ofhafnium oxide, zirconium oxide, aluminum oxide, hafnium dioxide-aluminaalloy, hafnium silicon oxide, hafnium silicon oxynitride, hafniumtantalum oxide, hafnium titanium oxide, hafnium zirconium oxide, anothersuitable high-K material, or a combination thereof.

In some embodiments, the gate dielectric layer 118 is deposited using anALD process, a CVD process, a spin-on process, one or more otherapplicable processes, or a combination thereof. In some embodiments, ahigh temperature annealing operation is used to reduce or eliminatedefects in the gate dielectric layer 118. Many variations and/ormodifications can be made to embodiments of the disclosure. In someembodiments, two different gate dielectric layers are formed over theportions 110A and 110B to serve as the gate dielectric layers ofdifferent transistors.

In some other embodiments, before the gate dielectric layer 118 isformed, an interfacial layer (not shown) is formed in the trench 116.The interfacial layer may be used to reduce stress between the gatedielectric layer 118 and the fin structures 101A and 101B. In someembodiments, the interfacial layer is made of or includes silicon oxide.In some embodiments, the interfacial layer is formed using an ALDprocess, a thermal oxidation process, one or more other applicableprocesses, or a combination thereof.

As shown in FIGS. 1E, 4C, and 5, a barrier layer 120 is deposited overthe gate dielectric layer 118, in accordance with some embodiments. Thebarrier layer 120 may be used to interface the gate dielectric layer 118with subsequently formed work function layers. The barrier layer 120 mayalso be used to prevent diffusion between the gate dielectric layer 118and the subsequently formed work function layers.

In some embodiments, the barrier layer 120 is made of or includes ametal-containing material. The metal-containing material may includetitanium nitride, tantalum nitride, one or more other suitablematerials, or a combination thereof. In some embodiments, the barrierlayer 120 includes multiple layers. In some embodiments, the barrierlayer 120 is deposited using an ALD process, a CVD process, a PVDprocess, an electroplating process, an electroless plating process, oneor more other applicable processes, or a combination thereof. In someother embodiments, the barrier layer 120 is not formed. In someembodiments, two different barrier layers are formed over the portions110A and 110B to serve as the barrier layers of different transistors.

Afterwards, work function layers 122A and 122B are respectively formedover the barrier layer 120, as shown in FIGS. 1E, 4C, and 5 inaccordance with some embodiments. The work function layer is used toprovide desired work function for transistors to enhance deviceperformance including improved threshold voltage. In the embodiments offorming an NMOS transistor, the work function layer can be an n-typemetal layer. The n-type metal layer is capable of providing a workfunction value suitable for the device, such as equal to or less thanabout 4.5 eV. The n-type metal layer may include metal, metal carbide,metal nitride, or a combination thereof. For example, the n-type metallayer is made of or includes titanium nitride, tantalum, tantalumnitride, one or more other suitable materials, or a combination thereof.

On the other hand, in the embodiments of forming a PMOS transistor, thework function layer can be a p-type metal layer. The p-type metal layeris capable of providing a work function value suitable for the device,such as equal to or greater than about 4.8 eV. The p-type metal layermay include metal, metal carbide, metal nitride, other suitablematerials, or a combination thereof. For example, the p-type metalincludes tantalum nitride, tungsten nitride, titanium, titanium nitride,one or more other suitable materials, or a combination thereof.

The work function layer may also be made of or include hafnium,zirconium, titanium, tantalum, aluminum, metal carbides (e.g., hafniumcarbide, zirconium carbide, titanium carbide, aluminum carbide),aluminides, ruthenium, palladium, platinum, cobalt, nickel, conductivemetal oxides, or a combinations thereof. The thickness and/or thecompositions of the work function layer may be fine-tuned to adjust thework function level. For example, a titanium nitride layer may be usedas a p-type metal layer or an n-type metal layer, depending on thethickness and/or the compositions of the titanium nitride layer.

In some embodiments, the work function layer 122A is a p-type metallayer, and the work function layer 122B is an n-type metal layer. Insome embodiments, the work function layer 122A is formed before the workfunction layer 122B. The work function layer 122A is deposited over thebarrier layer 120. Afterwards, the work function layer 122A ispatterned. For example, the work function layer 122A is positioned overthe portion 110A of the semiconductor substrate 100. The portion of thework function layer 122A originally over the portion 110B is removed.For example, a photolithography process and an etching process are usedto pattern the work function layer 122A. Similarly, the work functionlayer 122B is deposited and patterned over the portion 110B of thesemiconductor substrate 100.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some other embodiments, the work function layer 122B isformed before the work function layer 122A. In some other embodiments,both of the work function layers 122A and 122B have the sameconductivity type, such as n-type or p-type.

Afterwards, a blocking layer 124 is deposited over the work functionlayers 122A and 122B, as shown in FIGS. 1E, 4C, and 5 in accordance withsome embodiments. The blocking layer 124 may be used to prevent asubsequently formed metal filling layer from diffusing or penetratinginto the work function layers. In some embodiments, the blocking layer124 is made of or includes tantalum nitride, titanium nitride, one ormore other suitable materials, or a combination thereof. In someembodiments, the blocking layer 124 is deposited using an ALD process, aPVD process, an electroplating process, an electroless plating process,one or more other applicable processes, or a combination thereof.

Embodiments of the disclosure are not limited thereto. In some otherembodiments, the blocking layer 124 is not formed. In some otherembodiments, two different blocking layers are used between thesubsequently formed metal filling layers and the different work functionlayers 122A and 122B.

Afterwards, a metal filling layer 126 is deposited over the blockinglayer 124 to fill the trenches 116, as shown in FIGS. 1E, 4C, and 5 inaccordance with some embodiments. In some embodiments, the metal fillinglayer 126 is made of or includes tungsten, aluminum, copper, cobalt, oneor more other suitable materials, or a combination thereof. In someembodiments, the metal filling layer 126 is deposited using a PVDprocess, a CVD process, an electroplating process, an electrolessplating process, one or more other applicable processes, or acombination thereof.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some other embodiments, the metal filling layer 126 isnot formed. In some embodiments, two different metal filling layers areformed over the portions 110A and 110B to serve as the metal fillinglayers of different transistors.

In some embodiments, a first set of metal gate stack layers are formedover the portion 110A, and the portion 110B is blocked by, for example,a patterned mask. Afterwards, a second set of metal gate stack layersare formed over the portion 110B, and the first set of metal gate stacklayers are covered by another patterned mask.

In some embodiments, the metal gate stack layers, including the gatedielectric layer 118, the barrier layer 120, the work function layers122A and 122B, the blocking layer 124, and the metal filling layer 126,together fill the trenches 116 and cover the dielectric layer 113. Insome embodiments, the portion of the metal gate stack layers outside ofthe trench 116 is removed. For example, a planarization process is usedto partially remove the metal gate stack layers until the dielectriclayer 113 is exposed. As a result, the metal gate stack layers remainingin the trenches 116 form multiple metal gate stack lines 133, as shownin FIG. 2D. The planarization process may include a CMP process, agrinding process, an etching process, a dry polishing process, one ormore other applicable processes, or a combination thereof.

After the formation of the metal gate stack layers in the trenches 116,the metal gate stack layers (or metal gate stack lines) are patterned toform multiple metal gate stacks, in accordance with some embodiments.

As shown in FIG. 1F, a mask layer 128 is deposited and patterned overthe metal filling layer 126 to assist in the patterning of the metalgate stack layers (or metal gate stack lines), in accordance with someembodiments. In some embodiments, the mask layer 128 is made of orincludes a photoresist material, silicon nitride, silicon oxynitride,silicon oxide, titanium nitride, silicon carbide, one or more othersuitable materials, or a combination thereof. The mask layer 128 may bedeposited using a spin-on process, a CVD process, a PVD process, one ormore other applicable processes, or a combination thereof. One or morephotolithography an etching processes may be used to pattern the masklayer 128.

FIGS. 6A and 6B each shows a top view of an intermediate stage of aprocess for forming a semiconductor device structure, in accordance withsome embodiments. In some embodiments, FIGS. 6A and 6B each shows thetop view of the structure shown in FIG. 1F.

As shown in FIG. 6A or 6B, the mask layer 128 has an opening 130 whichpartially exposes two or more of the metal gate stack lines 133, inaccordance with some embodiments. The opening 130 also exposes a portionof the dielectric layer 113 between the exposed metal gate stack lines133. In some embodiments, the top view of the opening 130 is oval, asshown in FIG. 6A. In some other embodiments, the top view of the openingis rectangular, as shown in FIG. 6B. The top view of the opening 130 mayhave various shapes. For example, the top view of the opening 130 may besquare.

Referring to FIG. 1G, portions of the metal gate stack lines 133 areremoved to form a recess 132 in the metal gate stack lines 133, inaccordance with some embodiments. FIG. 2E shows the top view of therecess 132. The recess 132 may also be called a cut-metal-gate (CMG)opening. The recess 132 may extend into the dielectric layer 113 and thespacer elements 112 between the metal gate stack lines 133. The masklayer 128 is used to assist in the formation of the recess 132. In someembodiments, the mask layer 128 is removed after the formation of therecess 132. The recess 132 separates each of the metal gate stack lines133 into two gate stacks, as shown in FIGS. 1G and 2E in accordance withsome embodiments. As a result, gate stacks 133A, 133B, 133C, and 133Dare formed. In some embodiments, the gate stacks 133A and 133B are notin direct contact with each other. As shown in FIGS. 1G and 2E, therecess 132 exposes the isolation feature 102, in accordance with someembodiments.

The formation of the recess 132 may also be called an end cut process.The end cut process cuts “the metal gate stack line” (or the metal gatestack layers) into multiple separate metal gate stacks. The end cutprocess is performed after the deposition of the metal gate stacklayers. The metal gate stack layers are deposited in the trench 116which is large enough to contain two or more gate stacks and has arelatively low aspect ratio. Therefore, the deposition of the metal gatestack layers can be performed well. The quality and reliability of themetal gate stack layers are improved significantly. The size, theprofile, and the position of the recess 132 may be controlled moreprecisely. As a result, problems such as short circuiting or currentleakage are reduced or prevented.

As shown in FIG. 1G, the recess 132 has an upper width W₂, a lower widthW₁, and a height H. In some embodiments, the width W₁ is equal to thewidth W₂. However, embodiments of the disclosure are not limitedthereto. In some other embodiments, the width W₂ is greater than thewidth W₁. In some embodiments, the width W₁ is greater than the widthW₂.

By varying the etching conditions for forming the recess 132, theprofile of the recess 132 can be fine-tuned. For example, an angle θbetween a sidewall and a bottom of the recess 132 may be tuned byvarying the etching conditions. In some embodiments, the angle θ issubstantially equal to about 90 degrees. In these cases, the recess 132has vertical sidewalls. In some other embodiments, the angle θ isgreater than 90 degrees. In some other embodiments, the angle θ issmaller than 90 degrees. In these cases, the recess 132 has slantedsidewalls.

In some embodiments, the recess 132 is formed using an etching process.A gas mixture may be used in the etching process. The gas mixture mayinclude Cl₂, HBr, BCl₃, SiCl₄, NF₃, N₂, CF₄, CH₂F₂, O₂, Ar, N₂H₂, CH₄,SF₆, one or more other suitable gases, or a combination thereof. Duringthe etching operations, the composition of the gas mixture may be variedaccording to the requirements.

As shown in FIG. 2E, the top view of the recess 132 shows that therecess has different sizes at different regions, in accordance with someembodiments. The etching process for forming the recess 132 may etch themetal gate stack lines 133 and the dielectric layer 113 at differentetching rates. For example, the etching process etches the metal gatestack lines 133 at a first rate and etches the dielectric layer 113 at asecond rate. In some embodiments, the first rate is greater than thesecond rate. Since the metal gate stack lines 133 are etched at agreater rate, the recess 132 has a larger size at the regions originallyoccupied by the metal gate stack lines 133. As shown in FIG. 2E, thewidth D₁ of the recess 132 is greater than the width D₂ of the recess132. In some embodiments, the recess 132 has a curved profile. In someembodiments, the width of the recess 132 gradually decreases from thewidth D₁ to the width D₃ and gradually increases from the width D₃ tothe width D₂, as shown in FIG. 2E.

However, embodiments of the disclosure have many variations and/ormodifications. The top view of the recess 132 is not limited to be thatshown in FIG. 2E. In some other embodiments, the top view of the recess132 is the same as or similar to the embodiments shown in FIG. 7A. Theembodiments shown in FIG. 7A will be illustrated in more detail later.

As shown in FIG. 1H, a dielectric layer 134 is deposited over the gatestacks (and the dielectric layer 113) to fill the recess 132, inaccordance with some embodiments. The dielectric layer 134 may overfillsthe recess 132. In some embodiments, the dielectric layer 134 is made ofor includes silicon nitride, silicon oxide, silicon oxynitride,carbon-containing silicon oxide, one or more other suitable dielectricmaterials, or a combination thereof. In some embodiments, the materialof the dielectric layer 134 is different from that of the dielectriclayer 113 which surrounds the gate stacks 133A-133D.

However, embodiments of the disclosure are not limited thereto. In someother embodiments, the materials of the dielectric layer 134 and thedielectric layer 113 are substantially the same. The dielectric layer134 may also be used as a stressor layer that improves the carriermobility of the fin structures 101A and 101B. In some embodiments, thedielectric layer 134 is made of a material that has higher stress thanthat of the dielectric layer 113.

In some embodiments, the dielectric layer 134 is a single layer. In someother embodiments, the dielectric layer 134 has a multi-layeredstructure. In these cases, the dielectric layer 134 includes multiplesub-layers. In some embodiments, some or all of the sub-layers are madeof different materials. In some other embodiments, some or all of thesub-layers are made of the same material.

In some embodiments, the dielectric layer 134 is formed using adeposition process suitable for filling a recess or an opening. In someembodiments, the dielectric layer 134 is deposited using an ALD process,a flowable chemical vapor deposition (FCVD) process, a CVD process, oneor more other applicable processes, or a combination thereof. In someother embodiments, a spin-on process is used to form the dielectriclayer 134.

Afterwards, the portion of the dielectric layer 134 outside of therecess 132 is removed until the metal gate stacks are exposed, as shownin FIG. 1I in accordance with some embodiments. In some embodiments, aplanarization process is used to partially remove the dielectric layer134. The planarization process may include a CMP process, a grindingprocess, an etching process, one or more other applicable processes, ora combination thereof. As a result, the portion of the dielectric layer134 remaining in the recess 132 forms an insulating structure 134′, asshown in FIG. 1I in accordance with some embodiments.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some embodiments, the insulating structure 134′ includesa multilayer structure. For example, multiple dielectric layers aredeposited to fill the recess 132. Similarly, a planarization process maybe performed to remove the multiple dielectric layers outside of therecess 132. As a result, the multiple dielectric layers remaining in therecess 132 form the insulating structure 134′.

As shown in FIG. 1I, the insulating structure 134′ is adjacent to thegate stacks 133A and 133B, in accordance with some embodiments. As shownin FIG. 2F, the insulating structure 134′ is also adjacent to the gatestacks 133C and 133D. In some embodiments, the insulating structure 134′is in direct contact with the work function layers 122A and 122B and themetal fillings 126A and 126B of the gate stacks 133A and 133B, as shownin FIG. 1I. The insulating structure 134′ is also in direct contact withthe work function layers and the metal fillings of the gate stacks 133Cand 133D.

In some embodiments, the insulating structure 134′ also in directcontact with the gate dielectric layer 120 of the gate stacks 133A and133B, as shown in FIG. 1I. The insulating structure 134′ is also indirect contact with the gate dielectric layer of the gate stacks 133Cand 133D. In some embodiments, the insulating structure 134′ is also indirect contact with the isolation feature 102, as shown in FIG. 1I. Insome embodiments, the insulating structure 134′ is in direct contactwith the spacer elements 112, as shown in FIG. 2F.

As shown in FIG. 2F, transistors each including the gate stacks 133A,133B, 133C, and 133D are formed, in accordance with some embodiments.The insulating structure 134′ is formed between the ends of the gatestacks 133A and 133B to electrically isolate the gate stack 133A fromthe gate stack 133B. The insulating structure 134′ is also formedbetween the ends of the gate stacks 133C and 133D to electricallyisolate the gate stack 133C from the gate stack 133D. The gatedielectric layer and the work function layer are in direct contact withlower portions of the insulating structure 134′. The metal fillings arein direct contact with an upper portion of the insulating structure134′. Because each of the gate stacks is formed by patterning the metalgate stack layers, the height of the gate stack may be well controlled.In some embodiments, no planarization needs to be performed to ensurethat different gate stacks have the same height. Therefore, theassociated processing cost and processing time are reduced. The residuegenerated during the planarization process is also reduced.

In some embodiments, the insulating structure 134′ has a first portion135A that is between the gate stacks 133A and 133B, as shown in FIG. 2F.The first portion 135A of the insulating structure 134′ penetratesthrough one of the metal gate stack lines 133 and divides it into atleast two separate gate stacks. The first portion 135A of the insulatingstructure 134′ is in direct contact with the work function layers andmetal fillings of the gate stacks 133A and 133B. The insulatingstructure 134′ also has a second portion 135B that is between the gatestacks 133C and 133D. The second portion 135B of the insulatingstructure 134′ is in direct contact with the work function layers andmetal fillings of the gate stacks 133C and 133D. The insulatingstructure 134′ further has a third portion 135C that links the firstportion 135A and the second portion 135B, as shown in FIG. 2F. The thirdportion 135C of the insulating structure 134′ is in direct contact withthe dielectric layer 113.

Many variations and/or modifications can be made to embodiments of thedisclosure. The etching process for forming the recess 132 may befine-tuned to modify the profile of the recess 132.

FIGS. 7A-7B are top views of various stages of a process for forming asemiconductor device structure, in accordance with some embodiments.FIGS. 8A-8C are cross-sectional views of various stages of a process forforming a semiconductor device structure, in accordance with someembodiments. In some embodiments, FIG. 7A shows the top view of thestructure shown in FIG. 1G and other portions that are not shown in FIG.1G. FIG. 1G may be the cross-sectional view taken along the line I-I inFIG. 7A. In some embodiments, FIG. 8A shows a cross-sectional view takenalong the line L in FIG. 7A.

The etching process for forming the recess 132 may be fine-tuned toensure that no metal residue is left to electrically connect the gatestacks that are not intended to be shorted together. In someembodiments, the reaction gas used in the etching process includes BCl₃,Cl₂, SiCl₄, another suitable gas, or a combination thereof. In someembodiments, the etching process for forming the recess 132 is tuned tobe more isotropic. The etching rate of a dielectric material may beincreased. Therefore, the spacer elements 112 and the dielectric layer113 in the recess 132 may be removed more easily. The metal resideoriginally adhered on the surfaces of these dielectric materials maythus be removed. In some embodiments, the recess 132 has an oval-liketop view shape, as shown in FIG. 7A. As shown in FIG. 7A, the width D₄of the recess 132 in a plane view is slightly greater than the width D₅of the recess 132 in the plane view. In some embodiments, the width ofthe recess 132 gradually decreases from the width D₄ to the width D₆ andgradually increases from the width D₆ to the width D₅, as shown in FIG.7A. In some embodiments, the top view of the recess 132 is oval orrectangular, as shown in FIG. 7A. The profile of the recess 132 may beoval-like or rectangle-like.

In some embodiments, the width ratio (D6/D4) of the recess 132 is in arange from about 0.7 to about 1. In some cases, if the width ratio(D6/D4) is smaller than about 0.7, the metal residue may remain onsidewalls of the recess 132. This metal residue may cause shortcircuiting between the gate stacks that are intended to be separated bythe recess 132.

As shown in FIG. 7A, the recess 132 completely cuts through the metalgate stack lines 133, in accordance with some embodiments. As a result,the gate stacks 133A, 133B, 133C, and 133D are formed. As shown in FIG.8A, the recess 132 has a first portion that penetrates through the metalgate stack line 133. The first portion of the recess 132 has a depth H₁.In some embodiments, the dielectric layer 113 has a portion P thatremains in the recess 132. The recess 132 also has a second portion thatextends into the dielectric layer 113. The second portion of the recess132 has a depth H₂. The depth H₁ is greater than the depth H₂.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some embodiments, the formation of the recess 132 furtherincludes over-etching the metal gate stack lines 133. The dielectriclayer 113 may also be over-etched. As shown in FIG. 8B, after theover-etching process, the portion P of the dielectric layer 113 isremoved, in accordance with some embodiments. In some embodiments, FIG.8B shows the cross-sectional view of the structure shown in FIG. 7Ataken along the line L after the over-etching process.

Due to the over-etching process, not only is the portion P of thedielectric layer 113 is removed, but any metal residue that might remainon the sidewalls of the portion P are also removed. As shown in FIG. 7A,since metal residue formed while cutting the metal gate stack lines 133is substantially removed, the gate stacks 133A and 133B are sure to beelectrically isolated from each other by the recess 132, in accordancewith some embodiments. Similarly, the gate stacks 133C and 133D are alsoelectrically isolated from each other by the recess 132.

In some embodiments, due to the over-etching process, the recess 132further extends into the isolation feature 102 below the dielectriclayer 113, as shown in FIG. 8B. The over-etching process may also removeportions of the isolation feature 102. As shown in FIG. 8B, after theover-etching process, the recess 132 has a first portion that extendsinto the isolation feature 102 originally below the metal gate stackline 133. The first portion of the recess 132 has a depth H₁′ at theposition P₁. The recess 132 also has a second portion that extends intothe isolation feature 102 originally below the portion P of thedielectric layer 113. The second portion of the recess 132 has a depthH₂′ at the position P₂. The depth H₁′ is greater than the depth H₂′.Therefore, the recess 132 extends deeper into a first portion of theisolation feature 102 (originally below the metal gate stack line 133)than into a second portion of the isolation feature 102 (originallybelow the portion P of the dielectric layer 113). In some otherembodiments, the recess 132 extends into the first portion of theisolation feature 102 (originally below the metal gate stack line 133)without extending into the second portion of the isolation feature 102(originally below the portion P of the dielectric layer 113).

Afterwards, the insulating structure 134′ is formed in the recess 132,as shown in FIGS. 7B and 8C in accordance with some embodiments. Theformation of the insulating structure 134′ may be the same as or similarto those illustrated in FIGS. 1H, 1I, 2E, and 2F. In some embodiments,the insulating structure 134′ has an oval-like top view shape, as shownin FIG. 7B. In some embodiments, the insulating structure 134′penetrates through the dielectric layer 113. In some embodiments, theinsulating structure 134′ extends into the isolation feature 102.

FIG. 9 is a cross-sectional view of a semiconductor device structure, inaccordance with some embodiments. In some embodiments, FIG. 9 shows thecross-sectional view of the structure shown in FIG. 7B when taken alongthe line I-I. The insulating structure 134′ extends into the isolationfeature 102.

As shown in FIG. 7B, in some embodiments, the insulating structure 134′has a first portion 135A that is between the gate stacks 133A and 133B.The first portion 135A of the insulating structure 134′ penetratesthrough one of the metal gate stack lines 133. In some embodiments, thefirst portion 135A of the insulating structure 134′ is in direct contactwith the work function layers and metal fillings of the gate stacks 133Aand 133B. The insulating structure 134′ also has a second portion 135Bthat is between the gate stacks 133C and 133D. In some embodiments, thesecond portion 135B of the insulating structure 134′ is in directcontact with the work function layers and the metal fillings of the gatestacks 133C and 133D. The insulating structure 134′ further has a thirdportion 135C that links the first portion 135A and the second portion135B, as shown in FIG. 7B. In some embodiments, the third portion 135Cof the insulating structure 134′ is in direct contact with thedielectric layer 113. In some embodiments, the first portion 135A of theinsulating structure 134′ is thicker than the third portion 135C of theinsulating structure 134′, as shown in FIGS. 7B and 8C.

Embodiments of the disclosure form a semiconductor device structure withmetal gate stacks and fin structures. Multiple dummy gate stack linesare removed to form trenches surrounded by a dielectric layer. Each ofthe trenches is large enough to contain two or more metal gate stacks ofdifferent (or the same) transistors. Metal gate stack lines are formedto fill the trenches. Afterwards, a cut metal gate opening is formed tocut through two or more metal gate stack lines so as to separate each ofthe metal gate stack lines into two or more metal gate stacks. The cutmetal gate opening may also extend into the dielectric layer between themetal gate stack lines. An insulating structure is formed afterwards inthe cut metal gate stack opening to electrically isolate the metal gatestacks. Since the metal gate stack layers are deposited in a trenchwhich is large enough to contain two or more gate stacks, the depositionof the metal gate stack layers can be performed well. The quality andthe reliability of the metal gate stack layers are improvedsignificantly.

In accordance with some embodiments, a method for forming asemiconductor device structure is provided. The method includes forminga first dummy gate stack and a second dummy gate stack over asemiconductor substrate. The method also includes forming a dielectriclayer over the semiconductor substrate to surround the first dummy gatestack and the second dummy gate stack. The method further includesremoving the first dummy gate stack and the second dummy gate stack toform a first trench and a second trench in the dielectric layer. Inaddition, the method includes removing the first dummy gate stack andthe second dummy gate stack to form a first trench and a second trenchin the dielectric layer. The method also includes partially removing thefirst metal gate stack, the second metal gate stack, and the dielectriclayer to form a recess. The recess penetrates through the first metalgate stack and the second metal gate stack. The method further includesforming an insulating structure to completely or partially fill therecess.

In accordance with some embodiments, a method for forming asemiconductor device structure is provided. The method includes formingan isolation feature over a semiconductor substrate. The method includesforming a dielectric layer over the semiconductor substrate and theisolation feature and forming a first metal gate stack line and a secondmetal gate stack line over the semiconductor substrate. The first metalgate stack line and the second metal gate stack line are surrounded bythe dielectric layer. The method also includes forming an opening suchthat each of the first metal gate stack line and the second metal gatestack line is separated into at least two separate metal gate stacks.The method further includes forming an insulating structure in theopening, and the insulating structure extends into the isolationstructure.

In accordance with some embodiments, a semiconductor device structure isprovided. The semiconductor device structure includes a semiconductorsubstrate and a first, a second, a third, and a fourth metal gate stackover the semiconductor substrate. The semiconductor device structurealso includes a dielectric layer surrounding the first, the second, thethird, and the fourth metal gate stacks. The semiconductor devicestructure further includes an insulating structure over thesemiconductor substrate. The insulating structure has a first portionbetween the first metal gate stack and the second metal gate stacks. Theinsulating structure has a second portion between the third metal gatestack and the fourth metal gate stack. The insulating structure has athird portion linking the first portion and the second portion.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor device structure, comprising: asemiconductor substrate; a first, a second, a third, and a fourth metalgate stacks over the semiconductor substrate; a dielectric layersurrounding the first, the second, the third, and the fourth metal gatestacks; and an insulating structure over the semiconductor substrate,wherein the insulating structure has a first portion, a second portion,and a third portion, the first portion electrically isolates the firstmetal gate stack from the second metal gate stack, the second portionelectrically isolates the third metal gate stack from the fourth metalgate stack, the third portion links the first portion and the secondportion, and the first portion of the insulating structure includes acurved edge.
 2. The semiconductor device structure as claimed in claim1, wherein a first width of the first portion of the insulatingstructure in a plane view is greater than a second width of the thirdportion of the insulating structure in the plane view.
 3. Thesemiconductor device structure as claimed in claim 1, wherein theinsulating structure penetrates through the dielectric layer.
 4. Thesemiconductor device structure as claimed in claim 1, wherein the firstportion is thicker than the third portion.
 5. The semiconductor devicestructure as claimed in claim 1, further comprising an isolation featureover the semiconductor substrate and below the first, the second, thethird, and the fourth metal gate stacks.
 6. The semiconductor devicestructure as claimed in claim 5, wherein the insulating structureextends into the isolation feature.
 7. The semiconductor devicestructure as claimed in claim 6, wherein the first portion of theinsulating structure extends deeper into the isolation feature than thethird portion of the insulating structure.
 8. The semiconductor devicestructure as claimed in claim 1, wherein the first portion of theinsulating structure shrinks along a direction towards the third portionof the insulating structure.
 9. The semiconductor device structure asclaimed in claim 1, wherein: the first metal gate stack has a first workfunction layer and a first metal filling, the second metal gate stackhas a second work function layer and a second metal filling, and thefirst portion of the insulating structure is in direct contact with thefirst work function layer, the first metal filling, the second workfunction layer, and the second metal filling.
 10. The semiconductordevice structure as claimed in claim 1, wherein the insulating structureand the dielectric layer are made of different materials.
 11. Asemiconductor device structure, comprising: a semiconductor substrate; afirst metal gate stack and a second metal gate stack over thesemiconductor substrate; a dielectric layer surrounding the first metalgate stack and the second metal gate stack; and an insulating structureover the semiconductor substrate, wherein the insulating structure has afirst portion and a second portion, the first portion is sandwichedbetween the first metal gate stack and the second metal gate stack, thesecond portion links the first portion without being sandwiched betweenthe first metal gate stack and the second metal gate stack, and thefirst portion is wider than the second portion in a plan view.
 12. Thesemiconductor device structure as claimed in claim 11, wherein the firstportion of the insulating structure has a first convex surface facingtowards the first metal gate stack.
 13. The semiconductor devicestructure as claimed in claim 12, wherein the first portion of theinsulating structure has a second convex surface facing towards thesecond metal gate stack.
 14. The semiconductor device structure asclaimed in claim 11, wherein the second portion of the insulatingstructure has a first convex surface facing towards the dielectriclayer.
 15. The semiconductor device structure as claimed in claim 11,wherein the second portion of the insulating structure is in directcontact with the dielectric layer.
 16. A semiconductor device structure,comprising: a semiconductor substrate; a first metal gate stack and asecond metal gate stack over the semiconductor substrate; a dielectriclayer surrounding the first metal gate stack and the second metal gatestack; and an insulating structure between the first metal gate stackand the second metal gate stack, wherein the insulating structure has afirst convex surface facing towards the first metal gate stack.
 17. Thesemiconductor device structure as claimed in claim 16, wherein theinsulating structure has a second convex surface facing towards thesecond metal gate stack.
 18. The semiconductor device structure asclaimed in claim 16, wherein a portion of the insulating structureextends across edges of the first metal gate stack and the second metalgate stack and extends into the dielectric layer.
 19. The semiconductordevice structure as claimed in claim 16, wherein the insulatingstructure is in direct contact with the first metal gate stack, thesecond metal gate stack, and the dielectric layer.
 20. The semiconductordevice structure as claimed in claim 16, further comprising an isolationfeature above the semiconductor substrate and below the first metal gatestack, wherein the insulating structure extends into the isolationfeature.